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V436616R24V(L) 128 MB 168-PIN UNBUFFERED DIMM 3.3 VOLT 16M x 64 LOW PROFILE
PRELIMINARY
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Features
Component Used
tCK tAC
Description
The V436616R24V(L) memory module is organized 16, 777, 216 x 64 bits in a 168 pin dual in line memory module (DIMM). The 16M x 64 memory module uses 4 Mosel-Vitelic 16M x 16 SDRAM. The x64 modules are ideal for use in high performance computer systems where increased memory density and fast access times are required.
s 168 Pin Unbuffered 16, 777, 216 x 64 bit Oganization SDRAM DIMM s Utilizes High Performance 256 Mbit, 16M x 16 SDRAM in TSOPII-54 Packages s Fully PC Board Layout Compatible to INTEL'S Rev 1.0 Module Specification s Single +3.3V ( 0.3V) Power Supply s Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave) s Auto Refresh (CBR) and Self Refresh s All Inputs, Outputs are LVTTL Compatible s 8192 Refresh Cycles every 64 ms s Serial Present Detect (SPD) s SDRAM Performance
-7
CL=3 CL=2 Clock Access Time CAS CL=3 Latency CL=2 143 100 5.4 6
Units
MHz MHz ns ns
Clock Frequency (max.)
s Supported Latencies at 133 MHz Operation for Module
CL
3
tRCD
3
tRP
3
tRC
8 CLK
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Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Front VSS I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 I/O9 VSS I/O10 I/O11 I/O12 I/O13 I/O14 VCC I/O15 I/O16 CBO* CB1* VSS NC NC VCC WE DQM0 Pin 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56
Pin Configurations (Front Side/Back Side)
Front DQM1 CS0 DU VSS A0 A2 A4 A6 A8 A10(AP) BA1 VCC VCC CLK0 VSS DU CS2 DQM2 DQM3 DU VCC NC NC CB2* CB3* VSS I/O17 I/O18 Pin 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Front I/O19 I/O20 VCC I/O21 NC DU CKE1 VSS I/O22 I/O23 I/O24 VSS I/O25 I/O26 I/O27 I/O28 VCC I/O29 I/O30 I/O31 I/O32 VSS CLK2 NC WP SDA SCL VCC Pin 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 Back VSS I/O33 I/O34 I/O35 I/O36 VCC I/O37 I/O38 I/O39 I/O40 I/O41 VSS I/O42 I/O43 I/O44 I/O45 I/O46 VCC I/O47 I/O48 CB4* CB5* VSS NC NC VCC CAS DQM4 Pin 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 Back DQM5 CS1 RAS VSS A1 A3 A5 A7 A9 BA0 A11 VCC CLK1 A12 VSS CKE0 CS3 DQM6 DQM7 DU VCC NC NC CB6* CB7* VSS I/O49 I/O50 Pin 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Back I/O51 I/O52 VCC I/O53 NC DU NC VSS I/O54 I/O55 I/O56 VSS I/O57 I/O58 I/O59 I/O60 VCC I/O61 I/O62 I/O63 I/O64 VSS CLK3 NC SA0 SA1 SA2 VCC
Notes:
* These pins are not used in this module.
Pin Names
A0-A12 I/O1-I/O64 RAS CAS WE BA0, BA1 CKE0, CKE1 CS0-CS3 CLK0-CLK3 DQM0-DQM7 VCC VSS SCL SDA Address Inputs Data Inputs/Outputs Row Address Strobe Column Address Strobe Read/Write Input Bank Selects Clock Enable Chip Select Clock Input Data Mask Power (+3.3 Volts) Ground Clock for Presence Detect Serial Data OUT for Presence Detect
SA0-A2 CB0-CB7 NC DU
Serial Data IN for Presence Detect Check Bits (x72 Organization) No Connection Don't Use
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V
MOSEL VITELIC MANUFACTURED SDRAM
Part Number Information
4
3
66
16
R
2
4
V
A
T
G - XX
(L)
3.3V WIDTH DEPTH 168 PIN Unbuffered DIMM X16 COMPONENT REFRESH RATE 8K
SPEED 75PC = PC133 CL3,2 75 = PC133 CL3 10PC = PC133 CL3,2 LEAD FINISH G = GOLD COMPONENT PACKAGE, T = TSOP COMPONENT REV LEVEL LVTTL 4 BANKS LOW RPROFILE
Part Number V436616R24VATG-75L V436616R24VATG-10PCL
Description 128 MB, 16M x 64, 133 MHz, CL3 128 MB, 16M x 64, 100 MHz, CL2
Functional Block Diagram
10
CLK1/3 3.3pF WE CS0 WE LDQM I/O1-I/O8 10 DQM1 I/O9-I/O16 10 CS2 DQM2 I/O17-I/O24 10 DQM3 I/O25-I/O32 10 UDQM I/O9-I/O16 DQM7 I/O57-I/O64 10 CKE0 RAS CAS WP
47K
CS DQM4 I/O33-I/O40 10 DQM5 I/O41-I/O48 10
DQM0 I/O1-I/O8
WE LDQM I/O1-I/O8 UDQM I/O9-I/O16
CS
UDQM I/O9-I/O16
D0
D2
WE LDQM I/O1-I/O8
CS DQM6 I/O49-I/O56 10
WE LDQM I/O1-I/O8 UDQM I/O9-I/O16
CS
D1
D3
E2PROM SPD (256 WORD X 8 BITS) SCL0 SA2 SA1 SA0 SDA
CKE: SDRAM D0-D3 RAS: SDRAM D0-D3 CAS: SDRAM D0-D3 WE: SDRAM D0-D3 A(12:0): SDRAM D0-D3 BA0, BA1: SDRAM D0-D3 D0-D3 C0-C7 D0-D3 Two 0.1F capacitors per each SDRAM
WE A(12:0) BA0, BA1 VCC
10
D0/D2 D1/D3
CLK0/2 3.3pF
VSS
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V436616R24V(L)
written into the E2PROM device during module production using a serial presence detect protocol (I2C synchronous 2-wire bus)
E2PROM
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SPD-Table:
Byte Number
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Serial Presence Detect Information
A serial presence detect storage device - is assembled onto the module. Information about the module configuration, speed, etc. is
Hex Value Function Described
Number of SPD bytes Total bytes in Serial PD Memory Type Number of Row Addresses (without BS bits) Number of Column Addresses (for x16 SDRAM) Number of DIMM Banks Module Data Width Module Data Width (continued) Module Interface Levels SDRAM Cycle Time at CL=3 SDRAM Access Time from Clock at CL=3 Dimm Config (Error Det/Corr.) Refresh Rate/Type SDRAM width, Primary Error Checking SDRAM Data Width Minimum Clock Delay from Back to Back Random Column Address Burst Length Supported Number of SDRAM Banks Supported CAS Latencies CS Latencies WE Latencies SDRAM DIMM Module Attributes SDRAM Device Attributes: General Minimum Clock Cycle Time at CAS Latency = 2 Maximum Data Access Time from Clock for CL = 2 Minimum Clock Cycle Time at CL = 1 Maximum Data Access Time from Clock at CL = 1 Minimum Row Precharge Time Minimum Row Active to Row Active Delay tRRD Minimum RAS to CAS Delay tRCD Minimum RAS Pulse Width tRAS
SPD Entry Value
128 256 SDRAM 13 9 1 64 0 LVTTL 7.5 ns 5.4 ns none Self-Refresh, 7.8s x16 n/a / x16 tccd = 1 CLK 1, 2, 4, 8 4 CL =2, 3 CS Latency = 0 WL = 0 Non Buffered/Non Reg. Vcc tol 10% 10.0 ns 6.0 ns Not Supported Not Supported 20 ns 15 ns 20 ns 45 ns
16Mx64
80 08 04 0D 09 01 40 00 01 75 54 00 82 10 00 01
0F 04 06 01 01 00 0E A0 60 00 00 14 0F 14 2D
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Byte Number
31 32 33 34 35 62-61 62 63 64 65-71 72 73-90 91-92 93 94 95-98 99-125 126 127 128+ Reserved
SPD-Table: (Continued)
Hex Value Function Described
Module Bank Density (Per Bank) SDRAM Input Setup Time SDRAM Input Hold Time SDRAM Data Input Setup Time SDRAM Data Input Hold Time Superset Information (May be used in Future) SPD Revision Checksum for Bytes 0 - 62 Manufacturer's JEDEC ID Code Manufacturer's JEDEC ID Code (cont.) Manufacturing Location Module Part Number (ASCII) PCB Identification Code Assembly Manufacturing Date (Year) Assembly Manufacturing Date (Week) Assembly Serial Number 00 64 8D 00 V436616R24V(L) Mosel Vitelic Revision 2.0
SPD Entry Value
128 MByte 1.5 ns 0.8 ns 1.5 ns 0.8 ns
16Mx64
20 15 08 15 08 00 02 29 40 00
Intel Specification for Frequency Supported Features Unused Storage Location
DC Characteristics
TA = 0C to 70C; VSS = 0 V; VDD, VDDQ = 3.3V 0.3V
Limit Values Symbol
VIH V IL V OH VOL II(L) IO(L)
Parameter
Input High Voltage Input Low Voltage Output High Voltage (IOUT = -2.0 mA) Output Low Voltage (IOUT = 2.0 mA) Input Leakage Current, any input (0 V < VIN < 3.6 V, all other inputs = 0V) Output leakage current (DQ is disabled, 0V < VOUT < VCC)
Min.
2.0 -0.5 2.4 -- -40
Max.
VCC +0.3 0.8 -- 0.4 40
Unit
V V V V A A
-40
40
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Capacitance
TA = 0C to 70C; VDD = 3.3V 0.3V, f = 1 MHz
Symbol
CI1 CI2 CICL CI3 CI4 CIO CSC CSD
Limit Values Parameter
Input Capacitance (A0 to A11, RAS, CAS, WE) Input Capacitance (CS0-CS3) Input Capacitance (CLK0-CLK3) Input Capacitance (CKE0, CKE1) Input Capacitance (DQM0-DQM7) Input/Output Capacitance (I/O1-I/064) Input Capacitance (SCL, SA0-2) Input/Output Capacitance (SA0-SA2)
Max. 16M x 64
60 30 22 50 15 15 8 10
Unit
pF pF pF pF pF pF pF pF
Absolute Maximum Ratings
Parameter
Voltage on VDD Supply Relative to VSS Voltage on Input Relative to VSS Operating Temperature Storage Temperature Power Dissipation
Max.
-1 to 4.6 -1 to 4.6 0 to +70 -55 to 125 3.2
Units
V V C C W
Operating Currents
Symbol
ICC1
TA = 0C to 70C, VCC = 3.3V 0.3V (Recommended operating conditions otherwise noted)
Parameter & Test Condition
Operating Current tRC = tRCMIN., tCK= tCKMIN. Active-precharge command cycling, without Burst Operation Precharge Standby Current in Power Down Mode CS =VIH , CKE VIL(max) Precharge Standby Current in Non-Power Down Mode CS =VIH , CKE VIL(max) No Operating Current tCK = min, CS = VIH(min) bank ; active state ( 4 banks) Burst Operating Current tCK = min Read/Write command cycling 1 bank operation
Max.
920
Unit
mA
Note
7
ICC2P ICC2PS ICC2N ICC2NS ICC3 ICC3P
tCK = min. tCK = Infinity tCK = min. tCK = Infinity CKE > VIH(MIN.) CKE < VIL(MAX.) (Power down mode)
12 8 160 20 200 40
mA mA mA mA mA mA
7 7
ICC4
600
mA
7,8
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V436616R24V(L)
Notes: 1. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and tRC. Input signals are changed one time during tCK. 2. These parameter depend on output loading. Specified values are obtained with output open.
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Operating Currents
Symbol
ICC5
TA = 0C to 70C, VCC = 3.3V 0.3V (Recommended operating conditions otherwise noted) (Continued)
Parameter & Test Condition
Auto Refresh Current tCK = min Auto Refresh command cycling Self Refresh Current Self Refresh Mode, CKE<0.2V
Max.
960
Unit
mA
Note
7
ICC6
12 L-version 6.8
mA mA
AC Characteristics
TA = 0 to 70C; VSS = 0V; VCC = 3.3V 0.3V, tT = 1 ns
Limit Values # Symbol Parameter Min. Max. Unit Note
Clock and Clock Enable
1 tCK Clock Cycle Time CAS Latency = 3 CAS Latency = 2 Clock Frequency CAS Latency = 3 CAS Latency = 2 Access Time from Clock CAS Latency = 3 CAS Latency = 2 Clock High Pulse Width Clock Low Pulse Width Transition Tim 7.5 10 - - s ns ns
2
tCK
- -
133 100
MHz MHz 2, 4
3
tAC
- _ 2.5 2.5 0.3
5.4 6.0 - - 1.2
ns ns ns ns ns
4 5 6
tCH tCL tT
Setup and Hold Times
7 8 9 10 11 12 tIS tIH tCKS tCKH tRSC tSB Input Setup Time Input Hold Time Input Setup Time CKE Hold Time Mode Register Set-up Time Power Down Mode Entry Time 1.5 0.8 1.5 0.8 14 0 - - - - - 7.5 ns ns ns ns ns ns 5 5 5 5
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AC Characteristics
TA = 0 to 70C; VSS = 0V; VCC = 3.3V 0.3V, tT = 1 ns (Continued)
Limit Values # Symbol Parameter Min. Max. Common Parameters
13 14 15 16 17 18 tRCD tRP tRAS tRC tRRD tCCD Row to Column Delay Time Row Precharge Time Row Active Time Row Cycle Time Activate(a) to Activate(b) Command Period CAS(a) to CAS(b) Command Period 15 15 42 60 15 1 - - 100K - - -
Unit
Note
ns ns ns ns ns CLK
6 6 6 6 6
Refresh Cycle
19 20 tREF tSREX Refresh Period (8192 cycles) Self Refresh Exit Time
--
64
ms CLK
1
Read Cycle
21 22 23 24 tOH tLZ tHZ tDQZ Data Out Hold Time Data Out to Low Impedance Time Data Out to High Impedance Time DQM Data Out Disable Latency 3 1 3 - - - 7 2 ns ns ns CLK 7 2
Write Cycle
25 26 tWR tDQW Write Recovery Time DQM Write Mask Latency 2 0 - - CLK CLK
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Notes:
2. The specified values are valid when data inputs (DQ's) are stable during tRC(min.).
tCH 2.4V CLOCK 0.4V
1. The specified values are valid when addresses are changed no more than once during tCK(min.) and when No Operation commands are registered on every rising clock edge during tRC(min). Values are shown per module bank.
3. All AC characteristics are shown for device level. An initial pause of 100 s is required after power-up, then a Precharge All Banks command must be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin. 4. AC timing tests have VIL = 0.4V and V IH = 2.4V with the timing referenced to the 1.4V crossover point. The transition time is measured between VIH and VIL. All AC measurements assume tT = 1 ns with the AC output load circuit shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistive termination and with a input signal of 1V / ns edge rate between 0.8V and 2.0V.
+ 1.4 V 50 Ohm Z=50 Ohm I/O 50 pF
INPUT 1.4V
tCL
tSETUP tHOLD
tT
tAC tLZ tOH
tAC
I/O 50 pF
1.4V
OUTPUT
Measurement conditions for tac and toh
tHZ
5. If clock rising time is longer than 1 ns, a time (tT/2 -0.5) ns has to be added to this parameter. 6. Rated at 1.5V 7. If tT is longer than 1 ns, a time (tT -1) ns has to be added to this parameter. 8. Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be given to "wake-up" the device. 9. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied once the Self Refresh Exit command is registered. 10. 11. Referenced to the time which the output achieves the open circuit condition, not to output voltage levels. tDAL is equivalent to tDPL + tRP.
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V436616R24V(L)
1.000 (25.40)
0.118 (3.000)
.118DIA 0.004 (3.000DIA 0.100) 0.350 (8.890)
A 0.250 (6.350) .450 (11.430) 1.450 (36.830)
B 0.250 (6.350)
C
2.150 (54.61) 4.550 (115.57)
0.100 Min (2.540 Min)
0.700 (17.780)
(5.08 Min)
0.200 Min
0.250 (6.350)
0.250 (6.350)
(2.540 Min)
0.100 Min
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Package Diagram
SDRAM DIMM Module Package
5.250 (133.350) 0.118 (3.000) 5.014 (127.350) 0.089 (2.26) 0.123 .005 (3.125 .125) 0.079 0.004 (2.000 0.100) 0.123 0.005 (3.125 0.125) 0.079 0.004 (2.000 0.100)
R 0.079 (R 2.000) 0.157 0.004 (4.000 0.100)
0.100 Max (2.54 Max)
0.050 0.0039 (1.270 0.10)
0.039 0.002 (1.000 0.050) 0.008 0.006 (0.200 0.150) 0.050 (1.270)
Detail A
Detail B
Detail C
Tolerances : 0.005(.13) unless otherwise specified
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Label Information
Module Density
MOSEL VITELIC
Part Number Criteria of PC100 or PC133 (refer to MVI datasheet) DIMM manufacture date code
V436616R24XXXX-XX(L)128MB CLX PC133U-XXX-542-A XXXX-XXXXXXX Assembly in Taiwan
CAS Latency 2=CL2 3=CL3
PC133 U -XXX
UNBUFFERED DIMM CL= 3 or 2 (CLK) tRCD= 3 or 2 (CLK) tRP= 3 or 2 (CLK)
54 2
A
Gerber file Intel PC100 x16 Based JEDEC SPD Revision 2
tAC = 5.4 ns
V436616R24V(L) Rev.1.0 November 2001
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WORLDWIDE OFFICES
TAIWAN
7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888
V436616R24V(L)
UK & IRELAND
SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 44-1698-748515 FAX: 44-1698-748516
U.S.A.
3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952
NORTHWESTERN
3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952
The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC.
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SINGAPORE
10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013
JAPAN
ONZE 1852 BUILDING 6F 2-14-6 SHINTOMI, CHUO-KU TOKYO 104-0041 PHONE: 03-3537-1400 FAX: 03-3537-1402
GERMANY (CONTINENTAL EUROPE & ISRAEL)
BENZSTRASSE 32 71083 HERRENBERG GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22
U.S. SALES OFFICES
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(c) Copyright , MOSEL VITELIC Inc.
Printed in U.S.A.
MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications.
CILETIV LESOM
3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461

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